Nanoscale-Resistive Switching in Forming-Free Zinc Oxide Memristive Structures
Abstract
:1. Introduction
2. Materials and Methods
3. Results
4. Conclusions
Supplementary Materials
Author Contributions
Funding
Conflicts of Interest
References
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Bottom-Electrode Material | TiN | Pt | ZnO:In | ZnO:Pd |
---|---|---|---|---|
RHRS, MΩ | 276.11 ± 8.43 | 1141.37 ± 13.24 | 61.38 ± 2.54 | 0.67 ± 0.01 |
RLRS, MΩ | 0.120 ± 0.005 | 1.310 ± 0.003 | 0.231 ± 0.032 | 0.041 ± 0.002 |
RHRS/RLRS | 2307.8 ± 166.4 | 871.3 ± 12.1 | 272.5 ± 48.7 | 16.4 ± 1.1 |
Uset, V | 1.9 ± 0.2 | 2.7 ± 0.4 | 2.3 ± 0.2 | 1.2 ± 0.1 |
Ures, V | −1.3 ± 0.5 | −2.2 ± 0.6 | −2.7 ± 0.3 | −1.3 ± 0.1 |
No. Sample | 1 | 2 | 3 | 4 | 5 |
---|---|---|---|---|---|
Substrate temperature, °C | 500 | ||||
Number of laser pulses | 1000 | 2000 | 3000 | 4000 | 5000 |
Laser pulse repetition rate, Hz | 10 | ||||
Oxygen pressure, mTorr | 0.5 | ||||
Film thickness (hZnO), nm | 7.2 ± 2.5 | 23.6 ± 6.7 | 41.2 ± 9.7 | 48.8 ± 15.0 | 53.6 ± 18.3 |
Surface roughness (Ra), nm | 2.3 ± 0.2 | 5.5 ± 1.2 | 8.1 ± 1.6 | 13.1 ± 1.9 | 16.2 ± 2.1 |
No. Sample | 1 | 2 | 3 | 4 | 5 |
---|---|---|---|---|---|
RHRSp, MΩ | 8.12 ± 0.79 | 104.22 ± 4.52 | 276.11 ± 8.43 | 305.12 ± 13.11 | 386.71 ± 18.22 |
RLRSp, MΩ | 0.030 ± 0.007 | 0.060 ± 0.003 | 0.120 ± 0.005 | 0.142 ± 0.013 | 0.182 ± 0.018 |
RHRSs, MΩ | 7.93 ± 0.93 | 89.31 ± 12.7 | 250.54 ± 15.52 | 328.26 ± 39.41 | 378.81 ± 38.82 |
RLRSs, MΩ | 0.035 ± 0.012 | 0.061 ± 0.002 | 0.114 ± 0.009 | 0.148 ± 0.026 | 0.182 ± 0.053 |
RHRSp/RLRSp | 292.7 ± 94.6 | 1745.1 ± 162.6 | 2307.8 ± 166.4 | 2175.4 ± 291.4 | 2154.7 ± 313.3 |
RHRSs/RLRSs | 267.1 ± 118.1 | 1472.5 ± 256.4 | 2224.3 ± 311.6 | 2336.8 ± 676.8 | 2342.1 ± 895.3 |
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Tominov, R.V.; Vakulov, Z.E.; Polupanov, N.V.; Saenko, A.V.; Avilov, V.I.; Ageev, O.A.; Smirnov, V.A. Nanoscale-Resistive Switching in Forming-Free Zinc Oxide Memristive Structures. Nanomaterials 2022, 12, 455. https://doi.org/10.3390/nano12030455
Tominov RV, Vakulov ZE, Polupanov NV, Saenko AV, Avilov VI, Ageev OA, Smirnov VA. Nanoscale-Resistive Switching in Forming-Free Zinc Oxide Memristive Structures. Nanomaterials. 2022; 12(3):455. https://doi.org/10.3390/nano12030455
Chicago/Turabian StyleTominov, Roman V., Zakhar E. Vakulov, Nikita V. Polupanov, Aleksandr V. Saenko, Vadim I. Avilov, Oleg A. Ageev, and Vladimir A. Smirnov. 2022. "Nanoscale-Resistive Switching in Forming-Free Zinc Oxide Memristive Structures" Nanomaterials 12, no. 3: 455. https://doi.org/10.3390/nano12030455