Article Versions Notes

Leng K, Zhu X, Ma Z, Yu X, Xu J, Xu L, Li W, Chen K. Artificial Neurons and Synapses Based on Al/a-SiN_xO_y:H/P⁺-Si Device with Tunable Resistive Switching from Threshold to Memory. Nanomaterials. 2022; 12(3):311. https://doi.org/10.3390/nano12030311

Leng, Kangmin, Xu Zhu, Zhongyuan Ma, Xinyue Yu, Jun Xu, Ling Xu, Wei Li, and Kunji Chen. 2022. "Artificial Neurons and Synapses Based on Al/a-SiN_xO_y:H/P⁺-Si Device with Tunable Resistive Switching from Threshold to Memory" Nanomaterials 12, no. 3: 311. https://doi.org/10.3390/nano12030311

Leng, K., Zhu, X., Ma, Z., Yu, X., Xu, J., Xu, L., Li, W., & Chen, K. (2022). Artificial Neurons and Synapses Based on Al/a-SiN_xO_y:H/P⁺-Si Device with Tunable Resistive Switching from Threshold to Memory. Nanomaterials, 12(3), 311. https://doi.org/10.3390/nano12030311