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Journal: Nanomaterials, 2022
Volume: 12
Number: 4344
Article:
Mechanism of Random Telegraph Noise in 22-nm FDSOI-Based MOSFET at Cryogenic Temperatures
Authors:
by
Yue Ma, Jinshun Bi, Hanbin Wang, Linjie Fan, Biyao Zhao, Lizhi Shen and Mengxin Liu
Link:
https://www.mdpi.com/2079-4991/12/23/4344
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