Aldalbahi, A.; Velázquez, R.; Zhou, A.F.; Rahaman, M.; Feng, P.X.
Bandgap-Tuned 2D Boron Nitride/Tungsten Nitride Nanocomposites for Development of High-Performance Deep Ultraviolet Selective Photodetectors. Nanomaterials 2020, 10, 1433.
https://doi.org/10.3390/nano10081433
AMA Style
Aldalbahi A, Velázquez R, Zhou AF, Rahaman M, Feng PX.
Bandgap-Tuned 2D Boron Nitride/Tungsten Nitride Nanocomposites for Development of High-Performance Deep Ultraviolet Selective Photodetectors. Nanomaterials. 2020; 10(8):1433.
https://doi.org/10.3390/nano10081433
Chicago/Turabian Style
Aldalbahi, Ali, Rafael Velázquez, Andrew F. Zhou, Mostafizur Rahaman, and Peter X. Feng.
2020. "Bandgap-Tuned 2D Boron Nitride/Tungsten Nitride Nanocomposites for Development of High-Performance Deep Ultraviolet Selective Photodetectors" Nanomaterials 10, no. 8: 1433.
https://doi.org/10.3390/nano10081433
APA Style
Aldalbahi, A., Velázquez, R., Zhou, A. F., Rahaman, M., & Feng, P. X.
(2020). Bandgap-Tuned 2D Boron Nitride/Tungsten Nitride Nanocomposites for Development of High-Performance Deep Ultraviolet Selective Photodetectors. Nanomaterials, 10(8), 1433.
https://doi.org/10.3390/nano10081433