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Appl. Sci. 2019, 9(4), 678; https://doi.org/10.3390/app9040678

Recent Progress on Irradiation-Induced Defect Engineering of Two-Dimensional 2H-MoS2 Few Layers

1
Nuclear Science and Technology Center, School of Physics, Jilin University, Changchun 130012, China
2
Department of Chemistry, Morgan State University, Baltimore, MD 21251, USA
3
Department of Physics and Engineering Physics, Morgan State University, Baltimore, MD 21251, USA
4
Nuclear Engineering and Radiological Sciences, University of Michigan, Ann Arbor, MI 48109, USA
5
Department of Physics, Astronomy, and Geosciences, Towson University, Towson, MD 21252, USA
6
School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, China
*
Authors to whom correspondence should be addressed.
Received: 14 January 2019 / Revised: 6 February 2019 / Accepted: 8 February 2019 / Published: 16 February 2019

Abstract

Atom-thick two-dimensional materials usually possess unique properties compared to their bulk counterparts. Their properties are significantly affected by defects, which could be uncontrollably introduced by irradiation. The effects of electromagnetic irradiation and particle irradiation on 2H MoS 2 two-dimensional nanolayers are reviewed in this paper, covering heavy ions, protons, electrons, gamma rays, X-rays, ultraviolet light, terahertz, and infrared irradiation. Various defects in MoS 2 layers were created by the defect engineering. Here we focus on their influence on the structural, electronic, catalytic, and magnetic performance of the 2D materials. Additionally, irradiation-induced doping is discussed and involved. View Full-Text
Keywords: MoS2; 2D material; irradiation; review MoS2; 2D material; irradiation; review
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Zhao, G.-Y.; Deng, H.; Tyree, N.; Guy, M.; Lisfi, A.; Peng, Q.; Yan, J.-A.; Wang, C.; Lan, Y. Recent Progress on Irradiation-Induced Defect Engineering of Two-Dimensional 2H-MoS2 Few Layers. Appl. Sci. 2019, 9, 678.

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