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Open AccessFeature PaperArticle

Spin-ARPES EUV Beamline for Ultrafast Materials Research and Development

School of Electronic Science and Engineering, Nanjing University, Nanjing 210023, China
STFC Rutherford Appleton Laboratory, Central Laser Facility, Oxfordshire OX11 0QX, UK
National Research Council Institute of Photonics and Nanotechnologies, 35131 Padova, Italy
Department of Physics, York University, York YO10 5DD, UK
Shenzhen Institute for Quantum Science and Engineering, and Department of Physics, Southern University of Science and Technology, Shenzhen 518055, China
Department of Solid State Physics, Technische Universität Berlin, 10623 Berlin, Germany
Department of Physics, Southeast University, Nanjing 210009, China
Department of Electronic Engineering, Royal Holloway University of London, Egham TW20 0EX, UK
Diamond Light Source Ltd., Harwell Campus, Oxfordshire OX11 0QX, UK
York-Nanjing Joint Center in Spintronics, Department of Electronic Engineering, The University of York, York YO10 5DD, UK
Authors to whom correspondence should be addressed.
These authors contribute equally to this work.
Appl. Sci. 2019, 9(3), 370;
Received: 12 December 2018 / Revised: 11 January 2019 / Accepted: 15 January 2019 / Published: 22 January 2019
(This article belongs to the Special Issue Ultrafast Laser Pulses)
A new femtosecond, Extreme Ultraviolet (EUV), Time Resolved Spin-Angle Resolved Photo-Emission Spectroscopy (TR-Spin-ARPES) beamline was developed for ultrafast materials research and development. This 50-fs laser-driven, table-top beamline is an integral part of the “Ultrafast Spintronic Materials Facility”, dedicated to engineering ultrafast materials. This facility provides a fast and in-situ analysis and development of new materials. The EUV source based on high harmonic generation process emits 2.3 × 1011 photons/second (2.3 × 108 photons/pulse) at H23 (35.7 eV) and its photon energy ranges from 10 eV to 75 eV, which enables surface sensitive studies of the electronic structure dynamics. The EUV monochromator provides the narrow bandwidth of the EUV beamline while preserving its pulse duration in an energy range of 10–100 eV. Ultrafast surface photovoltaic effect with ~650 fs rise-time was observed in p-GaAs (100) from time-resolved ARPES spectra. The data acquisition time could be reduced by over two orders of magnitude by scaling the laser driver from 1 KHz, 4W to MHz, KW average power. View Full-Text
Keywords: high-order harmonic generation; ultrafast extreme violet; time-resolved ARPES high-order harmonic generation; ultrafast extreme violet; time-resolved ARPES
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Nie, Z.; Turcu, I.C.E.; Li, Y.; Zhang, X.; He, L.; Tu, J.; Ni, Z.; Xu, H.; Chen, Y.; Ruan, X.; Frassetto, F.; Miotti, P.; Fabris, N.; Poletto, L.; Wu, J.; Lu, Q.; Liu, C.; Kampen, T.; Zhai, Y.; Liu, W.; Cacho, C.; Wang, X.; Wang, F.; Shi, Y.; Zhang, R.; Xu, Y. Spin-ARPES EUV Beamline for Ultrafast Materials Research and Development. Appl. Sci. 2019, 9, 370.

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