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Appl. Sci. 2018, 8(6), 887;

RNA–CTMA Dielectrics in Organic Field Effect Transistor Memory

Beijing Institute of Graphic Communication, Beijing 102600, China
Department of Chemistry, Tsinghua University, Beijing 100084, China
Department of image & Materials science, Graduate School of Advanced Integration Science, Chiba University, 1-33 Yayoi-cho, Inage-ku, Chiba 263-8522, Japan
Author to whom correspondence should be addressed.
Received: 23 April 2018 / Revised: 16 May 2018 / Accepted: 18 May 2018 / Published: 29 May 2018
(This article belongs to the Section Materials)
Full-Text   |   PDF [3141 KB, uploaded 29 May 2018]   |  


In recent years, biopolymers are highly desired for their application in optic electronic devices, because of their unique structure and fantastic characteristics. In this work, a non-volatile memory (NVM) device based on the bio thin-film transistor (TFT) was fabricated through applying a new RNA–CTMA (cetyltrimethylammonium) complex as a gate dielectric. The physicochemical performance, including UV, CD spectral, thermal stability, surface roughness, and microstructure, has been investigated systematically. The RNA–CTMA complex film exhibits strong absorption with a well-defined absorption peak around 260 nm, the RMS roughness is ~2.1 nm, and displayed excellent thermal stability, up to 240 °C. In addition, the RNA–CTMA complex-based memory device shows good electric performance, with a large memory window up to 52 V. This demonstrates that the RNA–CTMA complex is a promising candidate for low cost, low-temperature processes, and as an environmentally friendly electronic device. View Full-Text
Keywords: RNA-CTMA; OTFT; transistor memory RNA-CTMA; OTFT; transistor memory

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Liang, L.; Fu, Y.; Li, L.; Zheng, H.; Wei, X.; Wei, Y.; Kobayashi, N. RNA–CTMA Dielectrics in Organic Field Effect Transistor Memory. Appl. Sci. 2018, 8, 887.

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