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Appl. Sci. 2017, 7(4), 325;

A Substrate-Reclamation Technology for GaN-Based Lighting-Emitting Diodes Wafer

Department of Industrial Engineering and Management, Da-Yeh University, Changhua 51591, Taiwan
Department of Materials Science and Engineering, National Chung Hsing University, Taichung 40227, Taiwan
Author to whom correspondence should be addressed.
Academic Editor: Jiwang Yan
Received: 20 February 2017 / Revised: 22 March 2017 / Accepted: 23 March 2017 / Published: 27 March 2017
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This study reports on the use of a substrate-reclamation technology for a gallium nitride (GaN)-based lighting-emitting diode (LED) wafer. There are many ways to reclaim sapphire substrates of scrap LED wafers. Compared with a common substrate-reclamation method based on chemical mechanical polishing, this research technology exhibits simple process procedures, without impairing the surface morphology and thickness of the sapphire substrate, as well as the capability of an almost unlimited reclamation cycle. The optical performances of LEDs on non-reclaimed and reclaimed substrates were consistent for 28.37 and 27.69 mcd, respectively. View Full-Text
Keywords: GaN-based LEDs; substrate-reclamation; sapphire substrate GaN-based LEDs; substrate-reclamation; sapphire substrate

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Huang, S.-Y.; Lin, P.-J. A Substrate-Reclamation Technology for GaN-Based Lighting-Emitting Diodes Wafer. Appl. Sci. 2017, 7, 325.

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