4.1. Reaction Process
Figure 8 shows the reaction process of the Al/PTFE system with different oxide thicknesses at 1200 K. At the initial stage of the reaction, the volume of the Al core expands after heating, which is manifested as an increase in the thickness of the Al core. The thickness of the Al core in the first structure (a) increases by 20 Å. The expansion of the Al core in the second structure (b) is about 8 Å, and for the third structure (c) is 6 Å. That is to say, the expansion size of the Al core decreases with the increase in the thickness of the oxide layer. This is because the oxide layer will limit the thermal volume expansion of the Al core and its limiting ability increases with the increase in the thickness of the oxide layer.
At 1 ps, the Al in the structure (a) expands around the PTFE matrix. In this process, Al will immediately be defluorinated with the pyrolysis products of the PTFE matrix/PTFE, resulting in the formation of AlF
x on the surface of Al. When the simulation reaches about 5 ps, due to the diffusion of the PTFE matrix, the oxide layer in structures (b) and (c) is in contact with the PTFE. However, due to the blocking effect of the oxide layer, PTFE/PTFE pyrolysis products cannot directly react with cAl in the Al core. On the contrary, they react with sAl ions in the oxide layer. Because the electronegativity of F is greater than that of O, Al in Al
2O
3 will form AlF
x with F, and O in Al
2O
3 will diffuse to the Al core after becoming O ion and react with cAl in the Al core to regenerate cAl
2O
3. This reaction causes the oxide layer to move toward the Al core, which is consistent with the existing research: ‘Al
2O
3 catalyzes PTFE decomposition’. In addition, the defluorination reaction generates AlF
x on the surface of the oxide layer, which causes PTFE to lose F and form unsaturated PTFE. After the loss of F, the carbon chain of unsaturated PTFE will be exposed, and then decomposed to form small fluorocarbon molecules:
When the simulation reaches 10 ps, part of the PTFE carbon in structure (a) begins to deposit on the surface of Al to form Al-C clusters, and some carbon exists in the form of elemental carbon. The product AlF
x begins to dissociate and generate small gas molecules such as AlF
3 and AlF₄
−. These small molecules diffuse into the PTFE matrix and catalyze the decomposition of PTFE. In structures (b) and (c), the reaction is significantly weaker than the structure (a). At 10 ps, the oxide layer in structure (b) begins to lose its role in hindering the reaction, and the small fluorocarbon molecules begin to penetrate into the oxide layer. Additionally, the reaction is no longer confined to the outside of the oxide layer. The reaction in structure (c) still occurs outside the oxide layer. The reactions that occur in this process are as below:
At 40 ps, the thickness of the product layer of structure (b) increases significantly compared with that at 10 ps, and the reaction process of Equations (3) and (4) occurs.
In
Figure 9, the dynamics results of three structures at different simulation temperatures (1200 K and 1900 K) were simulated to 40 ps. The results show that in the simulation of 1200 K, no obvious carbon element is observed in structure (a). But in the simulation of 1900 K, an obvious carbon element appears in structure (a). It indicates that high temperature (1900 K) contributes to the formation of carbon elements. Under high-temperature conditions, the movement of AlF
3 and AlF₄
− molecules in the system is Brownian motion. Therefore, with the increase in temperature, the diffusion degree of Al fluorine small molecules will also increase. In structure (c), the temperature will increase the moving rate of the oxide layer. When the simulation temperature is 1900 K, the oxide layer movement distance at 40 ps is significantly larger than the oxide layer movement distance at the same time when the simulation temperature is 1200 K. However, in structure (c), the reaction of Al and F still only occurs on the surface of the oxide layer.
It can be seen that under the influence of Al volume expansion, under pressure, the oxide layer contacts with PTFE and reacts. Al ions in the oxide layer react with PTFE or PTFE pyrolysis products to form AlFx. After a period of time, AlFx is dissociated into small gas molecules such as AlF3 and AlF₄−. These small molecules diffuse into the PTFE matrix under the action of Brownian motion and catalyze the decomposition of PTFE. Due to the barrier effect of the oxide layer, fluorine-containing molecules cannot directly react with cAl in the Al core, thus forming a fluorine-rich environment outside the oxide layer. Al2O3 reacts with F ions in fluorine-containing substances to form O ions, which makes the outer surface of the oxide layer negatively charged. Under the action of the electric field, O ions diffuse into the Al core, and cAl diffuses to the oxide layer interface under the action of concentration. Under the combined action of these two atoms, the oxide layer moves toward the Al core, and cAl and sAl are exposed to the fluorine-rich environment to react. In this process, the moving rate of the oxide layer and the moving rate of the reaction interface to the center are the keys to controlling the reaction.
4.2. Mechanism Function
To determine the mechanism function of Al/PTFE, the α-T and dα/dT-T curves were obtained from the experimental data of simultaneous thermal analysis, where α is defined as below:
In the equation, α is the reaction degree, m0 is the mass at the beginning of the reaction, mt is the mass at time t, and m∞ is the mass at the end of the reaction.
Figure 10 shows the
α-
T curve and d
α/d
T-
T curve with heating rates of 5 K/min and 20 K/min, respectively. When the reaction degree α does not reach 0.6, the dα/dT-α curves with heating rates of 5 K/min and 20 K/min have similar trends. It indicates that in the early stage of the reaction, the two have the same reaction process, that is, they have the same reaction mechanism function. At this time, the change trend of the two curves is similar, and the reaction rate is also close. However, when the degree of reaction reaches 0.6, the two curves are significantly different. It indicates that in the reaction process with a heating rate of 5 K/min and 20 K/min when it reaches a certain point, the reaction process with a heating rate of 20 K/min changes. In other words, the reaction mechanism function changes. This difference may be due to different heating rates leading to different dynamic behaviors of the reaction process, which in turn affects the mechanism of the reaction.
The mechanism function is a theoretical description of the reaction kinetic process. It can use a specific mathematical expression to describe the relationship between the rate and the reactant concentration in a specific reaction process. In the Al/PTFE molecular dynamics simulation results, it was found that the reaction rate was affected by the diffusion rate of fluorine-containing substances through the product layer in the structures with oxide layers of 0 Å and 5 Å, and the reaction process is shown in
Figure 11.
When there is no oxide layer to hinder, the fluorocarbon compound diffuses to the AL core through the product layer and reacts with the Al core. R0 is the initial radius of the Al particle. R is the radius of the Al particle after a certain time, and l is the product layer. x is the radius of the Al particle to reduce the distance. The PTFE matrix is decomposed into fluorocarbon small molecules, and the diffusion of small fluorocarbon molecules reacts with the Al core through the product layer. The mechanism function is derived as follows.
The following equation is used to calculate the reactivity of
n spherical particles:
In Equation (6),
α is the reactivity,
R0 is the initial radius of Al particles, and
x is the reduction distance of Al particle radius.
ρ is the Al density, and
n is
n Al particles in Al/PTFE. Equation (6) can be transformed into.
Rearrange Equation (7) to obtain:
where
l is the thickness of the product layer, whose growth law is Equation (9), and
k1 is a rate constant.
x and
l satisfy Equation (10),
a is a constant.
Substitute Equations (9) and (10) into Equation (8) to obtain:
Assuming
k’1 = a2k1/R02, Equation (11) can be transformed into the following D3 (Jander) model.
When there is an oxide layer, the reaction cannot enter the oxide layer, resulting in the accumulation of fluorine substances on the surface of the oxide layer, forming a fluorine-rich environment, as shown in
Figure 12. In this case, the reaction mainly occurs on the surface of the oxide layer. Influenced by the motion of various particles, the oxide layer continues to move toward the aluminum core, and the reaction proceeds continuously.
The reactivity is calculated as follows:
Equation (13) can be simplified to Equation (14).
α is the reaction degree,
r0 is the inner radius of the initial oxide layer, and
r is the radius of the oxide layer after a certain time.
ρ is the Al density, and
n is the number of Al particles in Al/PTFE.
r0 and
r satisfy Equation (15).
k2 is the reaction rate constant.
Substituting Equation (15) into Equation (14), the following equation can be obtained:
After rearranging Equation (16), we obtain:
Let
k2’ = k2/r0, Equation (17) becomes as below.
Equation (18) is the R3 model. Combined with the α-T curve, dα/dT-T curve, and kinetic results obtained by the DSC experiment, it can be seen that in the actual process, the initial Al/PTFE reaction process is hindered by the oxide layer. The reaction only reacts outside the oxide layer. The mechanism function is R3 at first. At a certain time, the oxide layer loses its hindrance, and the reaction diffuses into the oxide layer. The reaction mechanism function of Al/PTFE is transformed into D3, so the reaction mechanism function of Al/PTFE can be expressed as follows:
where 0 ≤
αc ≤ 1.
αc will change with the heating rate, ignition mode, and other reactive materials in different environments. In the TG-DSC experiment with a heating rate of 5 K/min,
αc is 1. Additionally, in the TG-DSC experiment with a heating rate of 20 K/min,
αc is 0.6.
4.3. Parameters of Rate Equation
For chemical reactions, the reaction rate can be described as follows:
The apparent activation energy (
Ea) in Equation (20) is the threshold or energy barrier that must be overcome in the occurrence of chemical bond recombination, which intuitively reflects the difficulty of a system reaction. The lower the apparent activation energy is, the easier the reaction is. On the contrary, the higher the apparent activation energy is, the more difficult the reaction is.
A is a pre-exponential factor, which is a measurement of the frequency of the reaction. The reaction activation energy and pre-exponential factor of the Al/PTFE system can be calculated according to the temperature
Tp (
Table 2) and Kissinger equation (Equation (21)) corresponding to the exothermic peak at different heating rates in the TG-DSC curve.
βi is the heating rate (K/min); Tpi is the peak temperature of the DSC curve (K); Ea is the activation energy (KJ/mol); R is the gas constant, 0.008314 KJ/(mol·K); A is the pre-exponential factor (min−1).
The Kissinger equation shows that 1
/Tpi has a linear relationship with ln (
βi/Tpi2), and a straight line can be obtained by plotting the two. The activation energy
Ea and pre-exponential factor
A of the system reaction can be calculated by the slope and intercept after linear fitting.
Figure 13 shows the Arrhenius curve by Kissinger fitting, where the slope is
Ea/R, the value is 31,131.2, and the calculated activation energy
Ea is about 258.8 KJ/mol. The intercept is ln(
R·A/Ea), the value is 25.1074, and the calculated pre-exponential factor
A is 2.495 × 10
15 min
−1. According to the experimental parameters and the
f(
α) obtained in
Section 4.2, the chemical reaction rate can be expressed as below:
There are two different mechanism functions in the continuous
α in the Al/PTFE reaction process. The range of
αc is: 0 ≤
αc ≤ 1, and the value of
αc is related to the environment of Al/PTFE (heating rate, ignition mode, impact velocity, etc.). When the TG-DSC experiment of Al/PTFE was conducted at a heating rate of 5 K/min, α
c = 1, the reaction mechanism function in the whole reaction process was R3. Using the following Equation (23) to calculate the curve of dα/d
T and α (
Figure 14), the theoretical curve and the experimental curve have a high degree of fitting.
4.4. Effect of Oxide Layer Thickness on Activation Energy
To study the effect of oxide layer thickness on the reaction behavior of Al/PTFE, reactive molecular dynamics simulation was implemented to calculate the apparent activation energy Ea of three structures (a, b, and c). In structures (a) and (b), the reaction mechanism function adopts the D3 model. The parabolic law equation (Equation (9)) is used to calculate the reaction rate constant k1 at different simulated temperatures. Specifically, the change of the product layer thickness l with the reaction time t during the reaction process was observed, and k1 was obtained by parabolic law fitting. The kinetic model of structure c is the R3 model, and the reaction rate constant k2 was calculated by using Equation (15) and dynamics results.
Ea was calculated by the Arrhenius equation (Equation (24)) and
k (
k1,
k2) was obtained at different temperatures of structures (a, b, and c). Among them,
k1 and
k2 have a certain proportional relationship with
k’1 and
k’2 in the reaction mechanism function model, which will not affect the slope (
Ea/R) in the Arrhenius curve. Therefore, the activation energy of the structure can be obtained by linear fitting using
k1 and
k2, as shown in
Figure 15.
It can be seen from
Figure 16 that the activation energies of the three structures (a, b, and c) are 11.3 KJ/mol, 46 KJ/mol, and 58 KJ/mol, respectively. Zeng et al. obtained the relationship between the Al particle size and the thickness of the oxide layer [
24,
26]:
In the equation, δ is the thickness of the oxide layer and d is the particle size of the Al particles. The oxide layer of the Al particle size used in this paper is calculated to be about 3.5 nm by using Equation (25). When the activation energy is 258.8 KJ/mol, the oxide layer thickness is 5.3 nm, indicating that Equations (25) and (26) have high rationality.
Although the reaction mechanism functions of structures (a) and (b) are consistent, the presence or absence of the oxide layer has a significant effect on the activation energy. In structure (b), the existence of the oxide layer increases the activation energy from 11.3 KJ/mol to 46 KJ/mol. The oxide layer cannot hinder the diffusion of fluorocarbon molecules into the oxide layer and reach the Al core during the reaction process. However, compared with structure (a) without the oxide layer, the oxide layer in structure (b) will affect the diffusion coefficient D of fluorocarbon molecules in the product layer, which in turn affects the activation energy. The diffusion coefficient D can be calculated by the following Equation (27):
In the equation, k1 is the rate constant, and ρ is the density of fluorocarbon molecules. The calculation shows that the diffusion coefficient D of structure (a) at 1200 K is 3.66109 m2/s, and the diffusion coefficient D at 1900 K is 5.6109 m2/s. The diffusion coefficient of structure (b) at 1200 K is 9.8108 m2/s, and the diffusion coefficient at 1900 K is 5.4109 m2/s. When the simulation temperature is 1200 K, the diffusion coefficient is significantly different. At 1900 K, the 5 Å oxide layer basically loses its effect, and the diffusion coefficients of the two are close. The difference in diffusion coefficients in different structures affects the activation energy of the reaction.
By increasing the thickness of the oxide layer from 5 Å to 10 Å (structure from b to c), the reaction process changed significantly. Different from the oxide layer in structure (b), which is rearranged, and the compactness decreases during the thermal expansion process, the oxide layer in structure (c) maintains compactness throughout the reaction process. Increasing the thickness of the oxide layer can increase the compactness of the oxide layer so that the oxide layer does not appear defects during the expansion process. So, the activation energy of structure (c) is greater than the activation energy of structure (b).