Dielectrophoretically Assembled SWCNTs Networks on SU-8 Substrate for PEG/SWCNTs Composite Gas Sensor
Abstract
:1. Introduction
2. Materials and Methods
2.1. CNTs/Polymers Composite Gas Sensor Architecture and Fabrication
- (a)
- A 4″ silicon wafer used as the supporting plate of the flexible SU-8 film was cleaned via the RCA process.
- (b)
- DC sputter deposition of adhesion layer (500 Å Ti) and sacrificial layer (3000 Å Cu) occurred.
- (c)
- Spin coating and curing of 17 μm SU-8 bottom cladding was performed.
- (d)
- Spin coating with positive photoresist AZ4620 (AZ Electronic Materials, Bridgewater, NJ, USA) was performed, followed by heating at 90 °C for 2 min, then the 1st mask and photolithography process was conducted. Then, we used a DC vacuum sputtering system to deposit 500 Å of titanium (Ti), 2000 Å of copper (Cu), and 500 Å of titanium (Ti). After deposition, we used a lift-off process for the pattern of the heater.
- (e)
- After spin coating with negative photoresist SU-8 3025 with 17 μm, we performed the 2nd mask and photolithography process. Spin-coating with a thickness of 5 μm of positive photoresist was performed, followed by heating to 90 °C for 2 min, and the silicon wafer was immersed in the developer (Propylene glycol methyl ether acetate, PGMEA) for 1 min.
- (f)
- After spin coating 5 μm positive photoresist AZ4620, we performed the 3rd mask and photolithography process. We used a DC vacuum sputtering system to deposit 500 Å of titanium (Ti), 2000 Å of gold (Au), and 500 Å of titanium (Ti). We used a lift-off process to remove excess metal and generate the designed electrode, wiring and pad.
- (g)
- After spin coating 17 μm negative photoresist SU-8 3025 and heating to 95 °C for 30 min, we immersed the silicon wafer in the developer (PGMEA) for 1 min, then heated it to 120 °C for 10 min. We performed the 4th mask and photolithography process process to complete the electrode pad opening. We used a Reactive Ion Etching (RIE) system for anisotropic dry etching of the top layer of titanium, defining the region where the electrode needed to be electrically isolated on the pad.
- (h)
- We immersed the component in copper etchant to release the sensor from the slicon wafer.
- (i)
- After the SU-8 based structure was fabricated, the PEG/SWCNTs bilayer sensing films were prepared via dielectrophoresis and drop casting method.
2.2. Experimental Scheme for Gas Sensor Evaluation
3. Results and Discussion
3.1. Dielectrophoresis Characterization
3.2. Heater Performance
3.3. Response of Target Gas
4. Conclusions
Author Contributions
Funding
Institutional Review Board Statement
Data Availability Statement
Conflicts of Interest
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DEP Voltage (Vpp) | Electrode Spacing | |||
---|---|---|---|---|
10 μm | 15 μm | 18 μm | 20 μm | |
1 V | 44.8 K | 132.4 K | 1700 K | 2300 K |
2 V | 29.6 K | 69.8 K | 237.7 K | 330 K |
3 V | 16.6 K | 23.6 K | 57.8 K | 68.9 K |
4 V | 1.65 K | 11.3 K | 23.4 K | 33.1 K |
5 V | 0.991 K | 2.43 K | 7.1 K | 23.7 K |
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Chiou, J.-C.; Wu, C.-C.; Lin, T.-M.; Huang, Y.-C. Dielectrophoretically Assembled SWCNTs Networks on SU-8 Substrate for PEG/SWCNTs Composite Gas Sensor. Polymers 2024, 16, 74. https://doi.org/10.3390/polym16010074
Chiou J-C, Wu C-C, Lin T-M, Huang Y-C. Dielectrophoretically Assembled SWCNTs Networks on SU-8 Substrate for PEG/SWCNTs Composite Gas Sensor. Polymers. 2024; 16(1):74. https://doi.org/10.3390/polym16010074
Chicago/Turabian StyleChiou, Jin-Chern, Chin-Cheng Wu, Tse-Mei Lin, and Yu-Chieh Huang. 2024. "Dielectrophoretically Assembled SWCNTs Networks on SU-8 Substrate for PEG/SWCNTs Composite Gas Sensor" Polymers 16, no. 1: 74. https://doi.org/10.3390/polym16010074
APA StyleChiou, J. -C., Wu, C. -C., Lin, T. -M., & Huang, Y. -C. (2024). Dielectrophoretically Assembled SWCNTs Networks on SU-8 Substrate for PEG/SWCNTs Composite Gas Sensor. Polymers, 16(1), 74. https://doi.org/10.3390/polym16010074