Tsai, C.; Lo, I.; Wang, Y.; Yang, C.; Yang, H.; Shih, H.; Huang, H.; Chou, M.M.C.; Huang, L.; Tseng, B.
Indium-Incorporation with InxGa1-xN Layers on GaN-Microdisks by Plasma-Assisted Molecular Beam Epitaxy. Crystals 2019, 9, 308.
https://doi.org/10.3390/cryst9060308
AMA Style
Tsai C, Lo I, Wang Y, Yang C, Yang H, Shih H, Huang H, Chou MMC, Huang L, Tseng B.
Indium-Incorporation with InxGa1-xN Layers on GaN-Microdisks by Plasma-Assisted Molecular Beam Epitaxy. Crystals. 2019; 9(6):308.
https://doi.org/10.3390/cryst9060308
Chicago/Turabian Style
Tsai, ChengDa, Ikai Lo, YingChieh Wang, ChenChi Yang, HongYi Yang, HueiJyun Shih, HuiChun Huang, Mitch M. C. Chou, Louie Huang, and Binson Tseng.
2019. "Indium-Incorporation with InxGa1-xN Layers on GaN-Microdisks by Plasma-Assisted Molecular Beam Epitaxy" Crystals 9, no. 6: 308.
https://doi.org/10.3390/cryst9060308
APA Style
Tsai, C., Lo, I., Wang, Y., Yang, C., Yang, H., Shih, H., Huang, H., Chou, M. M. C., Huang, L., & Tseng, B.
(2019). Indium-Incorporation with InxGa1-xN Layers on GaN-Microdisks by Plasma-Assisted Molecular Beam Epitaxy. Crystals, 9(6), 308.
https://doi.org/10.3390/cryst9060308