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Indium-Incorporation with InxGa1-xN Layers on GaN-Microdisks by Plasma-Assisted Molecular Beam Epitaxy

Department of Physics, Department of Materials and Optoelectronic Science, Center for Nanoscience and Nanotechnology, National Sun Yat-Sen University, Kaohsiung 80424, Taiwan
Advanced Semiconductor Engineering, Inc., Kaohsiung 811, Taiwan
Author to whom correspondence should be addressed.
Crystals 2019, 9(6), 308;
Received: 9 May 2019 / Revised: 6 June 2019 / Accepted: 12 June 2019 / Published: 14 June 2019
(This article belongs to the Special Issue Thin Film Growth by Molecular Beam Epitaxy)
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Indium-incorporation with InxGa1-xN layers on GaN-microdisks has been systematically studied against growth parameters by plasma-assisted molecular beam epitaxy. The indium content (x) of InxGa1-xN layer increased to 44.2% with an In/(In + Ga) flux ratio of up to 0.6 for a growth temperature of 620 °C, and quickly dropped with a flux ratio of 0.8. At a fixed In/(In + Ga) flux ratio of 0.6, we found that the indium content decreased as the growth temperature increased from 600 °C to 720 °C and dropped to zero at 780 °C. By adjusting the growth parameters, we demonstrated an appropriate InxGa1-xN layer as a buffer to grow high-indium-content InxGa1-xN/GaN microdisk quantum wells for micro-LED applications. View Full-Text
Keywords: plasma-assisted molecular beam epitaxy; InGaN; GaN-microdisks plasma-assisted molecular beam epitaxy; InGaN; GaN-microdisks

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Tsai, C.; Lo, I.; Wang, Y.; Yang, C.; Yang, H.; Shih, H.; Huang, H.; Chou, M.M.C.; Huang, L.; Tseng, B. Indium-Incorporation with InxGa1-xN Layers on GaN-Microdisks by Plasma-Assisted Molecular Beam Epitaxy. Crystals 2019, 9, 308.

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