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Crystals 2018, 8(8), 321;

Study of Nanoscratching Process of GaAs Using Molecular Dynamics

School of Mechanical, Electronic and Control Engineering, Beijing Jiaotong University, Beijing 100044, China
Key Laboratory of Vehicle Advanced Manufacturing, Measuring and Control Technology, Ministry of Education, Beijing 100044, China
Author to whom correspondence should be addressed.
Received: 14 July 2018 / Revised: 3 August 2018 / Accepted: 9 August 2018 / Published: 11 August 2018
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In this paper, molecular dynamics method was employed to investigate the nanoscratching process of gallium arsenide (GaAs) in order to gain insights into the material deformation and removal mechanisms in chemical mechanical polishing of GaAs. By analyzing the distribution of hydrostatic pressure and coordination number of GaAs atoms, it was found that phase transformation and amorphization were the dominant deformation mechanisms of GaAs in the scratching process. Furthermore, anisotropic effect in nanoscratching of GaAs was observed. The diverse deformation behaviors of GaAs with different crystal orientations were due to differences in the atomic structure of GaAs. The scratching resistance of GaAs(001) surface was the biggest, while the friction coefficient of GaAs(111) surface was the smallest. These findings shed light on the mechanical wear mechanism in chemical mechanical polishing of GaAs. View Full-Text
Keywords: GaAs; molecular dynamics; nanoscratch; anisotropic effect; phase transformation GaAs; molecular dynamics; nanoscratch; anisotropic effect; phase transformation

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Yi, D.; Li, J.; Zhu, P. Study of Nanoscratching Process of GaAs Using Molecular Dynamics. Crystals 2018, 8, 321.

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