Study of Nanoscratching Process of GaAs Using Molecular Dynamics
Abstract
:1. Introduction
2. Simulation Method
3. Results and Discussions
3.1. The Deformation Behaviors of GaAs(001)
3.2. The Anisotropic Effects
4. Conclusions
Author Contributions
Acknowledgments
Conflicts of Interest
References
- Wasmer, K.; Parlinska-Wojtan, M.; Graça, S.; Michler, J. Sequence of deformation and cracking behaviours of Gallium-Arsenide during nano-scratching. Mater. Chem. Phys. 2013, 138, 38–48. [Google Scholar] [CrossRef]
- Lastras-Martínez, L.; Castro-García, R.; Balderas-Navarro, R.; Lastras-Martínez, A. Microreflectance difference spectrometer based on a charge coupled device camera: surface distribution of polishing-related linear defect density in GaAs (001). Appl. Opt. 2009, 48, 5713–5717. [Google Scholar] [CrossRef] [PubMed]
- McGhee, L.; McMeekin, S.G.; Nicol, I.; Robertson, M.I.; Winfield, J.M. Chemomechanical polishing of gallium arsenide and cadmium telluride to subnanometre surface finish. Evaluation of the action and effectiveness of hydrogen peroxide, sodium hypochlorite and dibromine as reagents. J. Mater. Chem. 1994, 4, 29–34. [Google Scholar] [CrossRef]
- Matovu, J.; Ong, P.; Leunissen, L.; Krishnan, S.; Babu, S. Fundamental investigation of chemical mechanical polishing of GaAs in silica dispersions: material removal and arsenic trihydride formation pathways. ECS J. Solid State Sci. Technol. 2013, 2, P432–P439. [Google Scholar] [CrossRef]
- Yu, B.; Gao, J.; Chen, L.; Qian, L. Effect of sliding velocity on tribochemical removal of gallium arsenide surface. Wear 2015, 330, 59–63. [Google Scholar] [CrossRef]
- Zhao, D.; Lu, X. Chemical mechanical polishing: theory and experiment. Friction 2013, 1, 306–326. [Google Scholar] [CrossRef]
- Chen, R.; Luo, J.; Guo, D.; Lu, X. Extrusion formation mechanism on silicon surface under the silica cluster impact studied by molecular dynamics simulation. J. Appl. Phys. 2008, 104, 104907. [Google Scholar] [CrossRef]
- Si, L.; Guo, D.; Luo, J.; Lu, X.; Xie, G. Abrasive rolling effects on material removal and surface finish in chemical mechanical polishing analyzed by molecular dynamics simulation. J. Appl. Phys. 2011, 109, 084335. [Google Scholar] [CrossRef]
- Ye, Y.; Biswas, R.; Bastawros, A.; Chandra, A. Simulation of chemical mechanical planarization of copper with molecular dynamics. Appl. Phys. Lett. 2002, 81, 1875–1877. [Google Scholar] [CrossRef] [Green Version]
- Han, X.; Hu, Y.; Yu, S. Investigation of material removal mechanism of silicon wafer in the chemical mechanical polishing process using molecular dynamics simulation method. Appl. Phys. A 2009, 95, 899–905. [Google Scholar] [CrossRef]
- Si, L.; Guo, D.; Luo, J.; Lu, X. Monoatomic layer removal mechanism in chemical mechanical polishing process: A molecular dynamics study. J. Appl. Phys. 2010, 107, 064310. [Google Scholar] [CrossRef]
- Fang, T.-H.; Lin, S.-J.; Hong, Z.-H.; Shen, S.-T.; Huang, C.-T. Mechanical characteristics of nanoscratched gallium arsenide using molecular dynamics simulation. Nanosci. Nanotechnol. Lett. 2010, 2, 220–225. [Google Scholar] [CrossRef]
- Wasmer, K.; Parlinska-Wojtan, M.; Gassilloud, R.; Pouvreau, C.; Tharian, J.; Micher, J. Plastic deformation modes of gallium arsenide in nanoindentation and nanoscratching. Appl. Phys. Lett. 2007, 90, 031902. [Google Scholar] [CrossRef]
- Rino, J.P.; Chatterjee, A.; Ebbsjö, I.; Kalia, R.K.; Nakano, A.; Shimojo, F.; Vashishta, P. Pressure-induced structural transformation in GaAs: A molecular-dynamics study. Phys. Rev. B 2002, 65, 195206. [Google Scholar] [CrossRef]
- Chrobak, D.; Nordlund, K.; Nowak, R. Nondislocation origin of GaAs nanoindentation pop-in event. Phys. Rev. Lett. 2007, 98, 045502. [Google Scholar] [CrossRef] [PubMed]
- Plimpton, S. Fast parallel algorithms for short-range molecular dynamics. J. Comput. Phys. 1995, 117, 1–19. [Google Scholar] [CrossRef]
- Pettifor, D.; Oleinik, I. Analytic bond-order potential for open and close-packed phases. Phys. Rev. B 2002, 65, 172103. [Google Scholar] [CrossRef]
- Murdick, D.; Zhou, X.; Wadley, H.; Nguyen-Manh, D.; Drautz, R.; Pettifor, D. Analytic bond-order potential for the gallium arsenide system. Phys. Rev. B 2006, 73, 045206. [Google Scholar] [CrossRef]
- Kelchner, C.L.; Plimpton, S.; Hamilton, J. Dislocation nucleation and defect structure during surface indentation. Phys. Rev. B 1998, 58, 11085. [Google Scholar] [CrossRef]
- Ziegenhain, G.; Hartmaier, A.; Urbassek, H.M. Pair vs many-body potentials: Influence on elastic and plastic behavior in nanoindentation of fcc metals. J. Mech. Phys. Solids 2009, 57, 1514–1526. [Google Scholar] [CrossRef] [Green Version]
- Zhu, P.-Z.; Hu, Y.-Z.; Ma, T.-B.; Wang, H. Molecular dynamics study on friction due to ploughing and adhesion in nanometric scratching process. Tribol. Lett. 2011, 41, 41–46. [Google Scholar] [CrossRef]
- Mulliah, D.; Kenny, S.; Smith, R.; Sanz-Navarro, C. Molecular dynamic simulations of nanoscratching of silver (100). Nanotechnology 2003, 15, 243. [Google Scholar] [CrossRef]
- Yan, Y.; Sun, T.; Dong, S.; Luo, X.; Liang, Y. Molecular dynamics simulation of processing using AFM pin tool. Appl. Surf. Sci. 2006, 252, 7523–7531. [Google Scholar] [CrossRef]
- Pei, Q.; Lu, C.; Lee, H. Large scale molecular dynamics study of nanometric machining of copper. Comput. Mater. Sci. 2007, 41, 177–185. [Google Scholar] [CrossRef]
- Zhang, J.; Sun, T.; Yan, Y.; Liang, Y. Molecular dynamics study of scratching velocity dependency in AFM-based nanometric scratching process. Mater. Sci. Eng. A 2009, 505, 65–69. [Google Scholar] [CrossRef]
- Zhang, J.; Zhang, J.; Wang, Z.; Hartmaier, A.; Yan, Y.; Sun, T. Interaction between phase transformations and dislocations at incipient plasticity of monocrystalline silicon under nanoindentation. Comput. Mater. Sci. 2017, 131, 55–61. [Google Scholar] [CrossRef]
- Yuan, Y.; Sun, T.; Zhang, J.; Yan, Y. Molecular dynamics study of void effect on nanoimprint of single crystal aluminum. Appl. Surf. Sci. 2011, 257, 7140–7144. [Google Scholar] [CrossRef]
- Weir, S.T.; Vohra, Y.K.; Vanderborgh, C.A.; Ruoff, A.L. Structural phase transitions in GaAs to 108 GPa. Phys. Rev. B 1989, 39, 1280. [Google Scholar] [CrossRef]
- Besson, J.; Itie, J.; Polian, A.; Weill, G.; Mansot, J.; Gonzalez, J. High-pressure phase transition and phase diagram of gallium arsenide. Phys. Rev. B 1991, 44, 4214. [Google Scholar] [CrossRef]
- Zarudi, I.; Cheong, W.; Zou, J.; Zhang, L. Atomistic structure of monocrystalline silicon in surface nano-modification. Nanotechnology 2003, 15, 104. [Google Scholar] [CrossRef]
- Zhu, P.; Fang, F. Molecular dynamics simulations of nanoindentation of monocrystalline germanium. Appl. Phys. A 2012, 108, 415–421. [Google Scholar] [CrossRef]
- Lai, M.; Zhang, X.; Fang, F.; Wang, Y.; Feng, M.; Tian, W. Study on nanometric cutting of germanium by molecular dynamics simulation. Nanoscale Res. Lett. 2013, 8, 13. [Google Scholar] [CrossRef] [PubMed] [Green Version]
- Lai, M.; Zhang, X.; Fang, F. Crystal orientation effect on the subsurface deformation of monocrystalline germanium in nanometric cutting. Nanoscale Res. Lett. 2017, 12, 296. [Google Scholar] [CrossRef] [PubMed]
Orientation | Atomic Density per Unit Area | Distance between Planes |
---|---|---|
{001} | ||
{110} | ||
compound{111} |
© 2018 by the authors. Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/).
Share and Cite
Yi, D.; Li, J.; Zhu, P. Study of Nanoscratching Process of GaAs Using Molecular Dynamics. Crystals 2018, 8, 321. https://doi.org/10.3390/cryst8080321
Yi D, Li J, Zhu P. Study of Nanoscratching Process of GaAs Using Molecular Dynamics. Crystals. 2018; 8(8):321. https://doi.org/10.3390/cryst8080321
Chicago/Turabian StyleYi, Defu, Jianyong Li, and Pengzhe Zhu. 2018. "Study of Nanoscratching Process of GaAs Using Molecular Dynamics" Crystals 8, no. 8: 321. https://doi.org/10.3390/cryst8080321