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Journal: Crystals, 2018
Volume: 8
Number: 316

Article: Progress in Contact, Doping and Mobility Engineering of MoS2: An Atomically Thin 2D Semiconductor
Authors: by Amritesh Rai, Hema C. P. Movva, Anupam Roy, Deepyanti Taneja, Sayema Chowdhury and Sanjay K. Banerjee
Link: https://www.mdpi.com/2073-4352/8/8/316

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