Next Article in Journal / Special Issue
Thermostability, Photoluminescence, and Electrical Properties of Reduced Graphene Oxide–Carbon Nanotube Hybrid Materials
Previous Article in Journal / Special Issue
Is the Registry Between Adjacent Graphene Layers Grown on C-Face SiC Different Compared to That on Si-Face SiC
Open AccessArticle

Bound States and Supercriticality in Graphene-Based Topological Insulators

Institut für Theoretische Physik, Heinrich-Heine-Universität, D-40225 Düsseldorf, Germany
Department of Mathematical Science, City University London, London EC1V 0HB, UK
Author to whom correspondence should be addressed.
Crystals 2013, 3(1), 14-27;
Received: 16 November 2012 / Revised: 17 December 2012 / Accepted: 9 January 2013 / Published: 21 January 2013
(This article belongs to the Special Issue Graphenes)
We study the bound state spectrum and the conditions for entering a supercritical regime in graphene with strong intrinsic and Rashba spin-orbit interactions within the topological insulator phase. Explicit results are provided for a disk-shaped potential well and for the Coulomb center problem. View Full-Text
Keywords: graphene; supercriticality; spin-orbit interaction graphene; supercriticality; spin-orbit interaction
Show Figures

Figure 1

MDPI and ACS Style

Klöpfer, D.; De Martino, A.; Egger, R. Bound States and Supercriticality in Graphene-Based Topological Insulators. Crystals 2013, 3, 14-27.

Show more citation formats Show less citations formats

Article Access Map by Country/Region

Only visits after 24 November 2015 are recorded.
Back to TopTop