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Bound States and Supercriticality in Graphene-Based Topological Insulators

1
Institut für Theoretische Physik, Heinrich-Heine-Universität, D-40225 Düsseldorf, Germany
2
Department of Mathematical Science, City University London, London EC1V 0HB, UK
*
Author to whom correspondence should be addressed.
Crystals 2013, 3(1), 14-27; https://doi.org/10.3390/cryst3010014
Received: 16 November 2012 / Revised: 17 December 2012 / Accepted: 9 January 2013 / Published: 21 January 2013
(This article belongs to the Special Issue Graphenes)
We study the bound state spectrum and the conditions for entering a supercritical regime in graphene with strong intrinsic and Rashba spin-orbit interactions within the topological insulator phase. Explicit results are provided for a disk-shaped potential well and for the Coulomb center problem. View Full-Text
Keywords: graphene; supercriticality; spin-orbit interaction graphene; supercriticality; spin-orbit interaction
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MDPI and ACS Style

Klöpfer, D.; De Martino, A.; Egger, R. Bound States and Supercriticality in Graphene-Based Topological Insulators. Crystals 2013, 3, 14-27. https://doi.org/10.3390/cryst3010014

AMA Style

Klöpfer D, De Martino A, Egger R. Bound States and Supercriticality in Graphene-Based Topological Insulators. Crystals. 2013; 3(1):14-27. https://doi.org/10.3390/cryst3010014

Chicago/Turabian Style

Klöpfer, Denis; De Martino, Alessandro; Egger, Reinhold. 2013. "Bound States and Supercriticality in Graphene-Based Topological Insulators" Crystals 3, no. 1: 14-27. https://doi.org/10.3390/cryst3010014

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