Mott-Anderson Transition in Molecular Conductors: Influence of Randomness on Strongly Correlated Electrons in the κ-(BEDT-TTF)2X System
Abstract
:1. Introduction
2. Results and Discussion
2.1. X-ray Irradiation to the Molecular Conductors: Molecular Defects
2.2. Resistance Change by X-ray Irradiation at Room Temperature
2.3. Temperature Dependence of the Resistivity of κ-(BEDT-TTF)2X Irradiated by X-ray
2.4. Electron Localization by Randomness in κ-(BEDT-TTF)2Cu[N(CN)2]Br
2.5. Infrared Spectroscopy of the Localization Insulating State
2.6. Scatterings by Randomness for Electrons in Metals and Superconductors
3. Experimental Section
4. Conclusions
Acknowledgments
References
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Sasaki, T. Mott-Anderson Transition in Molecular Conductors: Influence of Randomness on Strongly Correlated Electrons in the κ-(BEDT-TTF)2X System. Crystals 2012, 2, 374-392. https://doi.org/10.3390/cryst2020374
Sasaki T. Mott-Anderson Transition in Molecular Conductors: Influence of Randomness on Strongly Correlated Electrons in the κ-(BEDT-TTF)2X System. Crystals. 2012; 2(2):374-392. https://doi.org/10.3390/cryst2020374
Chicago/Turabian StyleSasaki, Takahiko. 2012. "Mott-Anderson Transition in Molecular Conductors: Influence of Randomness on Strongly Correlated Electrons in the κ-(BEDT-TTF)2X System" Crystals 2, no. 2: 374-392. https://doi.org/10.3390/cryst2020374