Wangila, E.; Gunder, C.; Zamani-Alavijeh, M.; Maia de Oliveira, F.; Kryvyi, S.; Sheibani, A.; Mazur, Y.I.; Yu, S.-Q.; Salamo, G.J.
High-Quality Single-Step Growth of GaAs on C-Plane Sapphire by Molecular Beam. Crystals 2024, 14, 724.
https://doi.org/10.3390/cryst14080724
AMA Style
Wangila E, Gunder C, Zamani-Alavijeh M, Maia de Oliveira F, Kryvyi S, Sheibani A, Mazur YI, Yu S-Q, Salamo GJ.
High-Quality Single-Step Growth of GaAs on C-Plane Sapphire by Molecular Beam. Crystals. 2024; 14(8):724.
https://doi.org/10.3390/cryst14080724
Chicago/Turabian Style
Wangila, Emmanuel, Calbi Gunder, Mohammad Zamani-Alavijeh, Fernando Maia de Oliveira, Serhii Kryvyi, Aida Sheibani, Yuriy I. Mazur, Shui-Qing Yu, and Gregory J. Salamo.
2024. "High-Quality Single-Step Growth of GaAs on C-Plane Sapphire by Molecular Beam" Crystals 14, no. 8: 724.
https://doi.org/10.3390/cryst14080724
APA Style
Wangila, E., Gunder, C., Zamani-Alavijeh, M., Maia de Oliveira, F., Kryvyi, S., Sheibani, A., Mazur, Y. I., Yu, S.-Q., & Salamo, G. J.
(2024). High-Quality Single-Step Growth of GaAs on C-Plane Sapphire by Molecular Beam. Crystals, 14(8), 724.
https://doi.org/10.3390/cryst14080724
