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Journal: Crystals, 2024
Volume: 14
Number: 553
553
Article: Study of Leakage Current Transport Mechanisms in Pseudo-Vertical GaN-on-Silicon Schottky Diode Grown by Localized Epitaxy
Authors: by Mohammed El Amrani, Julien Buckley, Thomas Kaltsounis, David Plaza Arguello, Hala El Rammouz, Daniel Alquier and Matthew Charles
Link: https://www.mdpi.com/2073-4352/14/6/553

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