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Journal: Crystals, 2024
Volume: 14
Number: 536

Article: Properties of Z1 and Z2 Deep-Level Defects in n-Type Epitaxial and High-Purity Semi-Insulating 4H-SiC
Authors: by Paweł Kamiński, Roman Kozłowski, Jarosław Żelazko, Kinga Kościewicz and Tymoteusz Ciuk
Link: https://www.mdpi.com/2073-4352/14/6/536

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