Order Article Reprints

Guo N, Pei Y, Yuan W, Li Y, Zhao S, Yang S, Zhang Y, Liu X. Layered Epitaxial Growth of 3C/4H Silicon Carbide Confined by Surface Micro-Nano Steps. Crystals. 2023; 13(7):1123. https://doi.org/10.3390/cryst13071123

Guo, Ning, Yicheng Pei, Weilong Yuan, Yunkai Li, Siqi Zhao, Shangyu Yang, Yang Zhang, and Xingfang Liu. 2023. "Layered Epitaxial Growth of 3C/4H Silicon Carbide Confined by Surface Micro-Nano Steps" Crystals 13, no. 7: 1123. https://doi.org/10.3390/cryst13071123

Guo, N., Pei, Y., Yuan, W., Li, Y., Zhao, S., Yang, S., Zhang, Y., & Liu, X. (2023). Layered Epitaxial Growth of 3C/4H Silicon Carbide Confined by Surface Micro-Nano Steps. Crystals, 13(7), 1123. https://doi.org/10.3390/cryst13071123