Order Article Reprints

Lee S-T, Kong M, Jang H, Song C-H, Kim S, Yun D-Y, Jeong H-s, Kim D-H, Shin C-S, Seo K-S. The Variation of Schottky Barrier Height Induced by the Phase Separation of InAlAs Layers on InP HEMT Devices. Crystals. 2022; 12(7):966. https://doi.org/10.3390/cryst12070966

Lee, Sang-Tae, Minwoo Kong, Hyunchul Jang, Chang-Hun Song, Shinkeun Kim, Do-Young Yun, Hyeon-seok Jeong, Dae-Hyun Kim, Chan-Soo Shin, and Kwang-Seok Seo. 2022. "The Variation of Schottky Barrier Height Induced by the Phase Separation of InAlAs Layers on InP HEMT Devices" Crystals 12, no. 7: 966. https://doi.org/10.3390/cryst12070966

Lee, S.-T., Kong, M., Jang, H., Song, C.-H., Kim, S., Yun, D.-Y., Jeong, H.-s., Kim, D.-H., Shin, C.-S., & Seo, K.-S. (2022). The Variation of Schottky Barrier Height Induced by the Phase Separation of InAlAs Layers on InP HEMT Devices. Crystals, 12(7), 966. https://doi.org/10.3390/cryst12070966