Impact of Long-Term Annealing on Photoluminescence from Ge1−xSnx Alloys
Abstract
:1. Introduction
2. Materials and Methods
3. Results and Discussion
3.1. X-ray Diffraction Measurements
3.2. Photoluminescence from Samples with the Same Level of Strain but Different Sn Composition
3.3. Photoluminescence from Samples with the Same Sn Composition but Different Level of Strain and Measurement of ΔE
4. Conclusions
Supplementary Materials
Author Contributions
Funding
Conflicts of Interest
References
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Laser Wavelength (nm) | Spot Diameter (µm) | Average Power (mW) | Average Power Density (kW/cm2) | Excitation Carrier Density (Photon/s/cm2) | Penetration Depth (nm) |
---|---|---|---|---|---|
532 | 64 | 500 | 15 | 4.1 × 1019 | ~100 |
1064 | 51 | 300 | 6 | 3.5 × 1022 | ~900 |
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Olorunsola, O.; Stanchu, H.; Ojo, S.; Pandey, K.; Said, A.; Margetis, J.; Tolle, J.; Kuchuk, A.; Mazur, Y.I.; Salamo, G.; et al. Impact of Long-Term Annealing on Photoluminescence from Ge1−xSnx Alloys. Crystals 2021, 11, 905. https://doi.org/10.3390/cryst11080905
Olorunsola O, Stanchu H, Ojo S, Pandey K, Said A, Margetis J, Tolle J, Kuchuk A, Mazur YI, Salamo G, et al. Impact of Long-Term Annealing on Photoluminescence from Ge1−xSnx Alloys. Crystals. 2021; 11(8):905. https://doi.org/10.3390/cryst11080905
Chicago/Turabian StyleOlorunsola, Oluwatobi, Hryhorii Stanchu, Solomon Ojo, Krishna Pandey, Abdulla Said, Joe Margetis, John Tolle, Andrian Kuchuk, Yuriy I. Mazur, Gregory Salamo, and et al. 2021. "Impact of Long-Term Annealing on Photoluminescence from Ge1−xSnx Alloys" Crystals 11, no. 8: 905. https://doi.org/10.3390/cryst11080905