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Journal: Crystals, 2021
Volume: 11
Number: 87

Article: Effects of Al Composition and High-Temperature Atomic Layer-Deposited Al2O3 Layer on the Leakage Current Characteristics of AlGaN/GaN Schottky Barrier Diodes
Authors: by Jae-Hoon Lee, Jung-Hee Lee and Ki-Sik Im
Link: https://www.mdpi.com/2073-4352/11/2/87

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