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Journal: Crystals, 2020
Volume: 10
Number: 712

Article: The Study of High Breakdown Voltage Vertical GaN-on-GaN p-i-n Diode with Modified Mesa Structure
Authors: by Wen-Chieh Ho, Yao-Hsing Liu, Wen-Hsuan Wu, Sung-Wen Huang Chen, Jerry Tzou, Hao-Chung Kuo and Chia-Wei Sun
Link: https://www.mdpi.com/2073-4352/10/8/712

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