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Article

Numerical Investigation into Optoelectronic Performance of InGaN Blue Laser in Polar, Non-Polar and Semipolar Crystal Orientation

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Department of Mechatronics Engineering, Khulna University of Engineering & Technology, Khulna 9203, Bangladesh
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Department of Electrical & Electronic Engineering, Jashore University of Science & Technology, Jashore 7408, Bangladesh
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Centre for Accident Research & Road Safety-Queensland (CARRS-Q), Queensland University of Technology, Brisbane, Queensland 4059, Australia
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School of Physics, The University of Sydney, Sydney, NSW 2006, Australia
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Department of Electrical & Electronic Engineering, Khulna University of Engineering & Technology, Khulna 9203, Bangladesh
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Department of Computer Science, Cihan University Sulaimaniya, Sulaimaniya 46001, Iraq
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Electrical Engineering Department, College of Engineering, University of Sulaimani, Sulaimaniya 46001, Iraq
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Department of Electrical & Computer Engineering, King Abdulaziz University, Jeddah 21589, Saudi Arabia
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Center of Excellence in Intelligent Engineering Systems (CEIES), King Abdulaziz University, Jeddah 21589, Saudi Arabia
*
Author to whom correspondence should be addressed.
Crystals 2020, 10(11), 1033; https://doi.org/10.3390/cryst10111033
Received: 22 September 2020 / Revised: 2 November 2020 / Accepted: 10 November 2020 / Published: 13 November 2020
Recently, InGaN grown on semipolar and non-polar orientation has caused special attraction due to reduction in the built-in polarization field and increased confinement of high energy states compared to traditional polar c-plane orientation. However, any widespread-accepted report on output power and frequency response of the InGaN blue laser in non-c-plane orientation is readily unavailable. This work strives to address an exhaustive numerical investigation into the optoelectronic performance and frequency response of In0.17Ga0.83N/GaN quantum well laser in polar (0001), non-polar (101¯0) and semipolar (101¯2), (112¯2) and (101¯1) orientations by working out a 6 × 6 k.p Hamiltonian at the Γ-point using the tensor rotation technique. It is noticed that there is a considerable dependency of the piezoelectric field, energy band gap, peak optical gain, differential gain and output power on the modification in crystal orientation. Topmost optical gain of 4367 cm−1 is evaluated in the semipolar (112¯2)-oriented laser system at an emission wavelength of 448 nm when the injection carrier density is 3.7 × 1018 cm−3. Highest lasing power and lowest threshold current are reported to be 4.08 mW and 1.45 mA in semipolar (112¯2) crystal orientation. A state-space model is formed in order to achieve the frequency response which indicates the highest magnitude (dB) response in semipolar (112¯2) crystal orientation. View Full-Text
Keywords: blue laser; frequency response; InGaN; quantum confined stark effect; semipolar orientation; valence band blue laser; frequency response; InGaN; quantum confined stark effect; semipolar orientation; valence band
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MDPI and ACS Style

Roy, S.; Kiratnia, S.G.; Roy, P.N.; Hasan, M.M.; Howlader, A.H.; Rahman, M.S.; Islam, M.R.; Rana, M.M.; Abdulrazak, L.F.; Mehedi, I.M.; Islam, M.S.; Hossain, M.B. Numerical Investigation into Optoelectronic Performance of InGaN Blue Laser in Polar, Non-Polar and Semipolar Crystal Orientation. Crystals 2020, 10, 1033. https://doi.org/10.3390/cryst10111033

AMA Style

Roy S, Kiratnia SG, Roy PN, Hasan MM, Howlader AH, Rahman MS, Islam MR, Rana MM, Abdulrazak LF, Mehedi IM, Islam MS, Hossain MB. Numerical Investigation into Optoelectronic Performance of InGaN Blue Laser in Polar, Non-Polar and Semipolar Crystal Orientation. Crystals. 2020; 10(11):1033. https://doi.org/10.3390/cryst10111033

Chicago/Turabian Style

Roy, Sourav, Sharadindu G. Kiratnia, Priyo N. Roy, Md. M. Hasan, Ashraful H. Howlader, Md. S. Rahman, Md. R. Islam, Md. M. Rana, Lway F. Abdulrazak, Ibrahim M. Mehedi, Md. S. Islam, and Md. B. Hossain 2020. "Numerical Investigation into Optoelectronic Performance of InGaN Blue Laser in Polar, Non-Polar and Semipolar Crystal Orientation" Crystals 10, no. 11: 1033. https://doi.org/10.3390/cryst10111033

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