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Open AccessArticle

Incorporation of Cd-Doping in SnO2

European Organization for Nuclear Research (CERN), CH-1211 Geneva, Switzerland
Institute for Materials Science and Center for Nanointegration Duisburg-Essen (CENIDE), University of Duisburg-Essen, 45141 Essen, Germany
Helmholtz-Institut für Strahlen- und Kernphysik, University of Bonn, 53115 Bonn, Germany
Instituto de Pesquisas Energéticas e Nucleares, IPEN, 05508-000 São Paulo, SP, Brazil
Author to whom correspondence should be addressed.
Crystals 2020, 10(1), 35;
Received: 13 December 2019 / Revised: 7 January 2020 / Accepted: 8 January 2020 / Published: 13 January 2020
(This article belongs to the Special Issue Defects in Crystals)
Tuning the electrical properties of materials by controlling their doping content has been utilized for decades in semiconducting oxides. Here, an atomistic view is successfully employed to obtain local information on the charge distribution and point defects in Cd-doped SnO2. We present a study that uses the time-differential perturbed gamma–gamma angular correlations (TDPAC) method in samples prepared by using a sol–gel approach. The hyperfine field parameters are presented as functions of the annealing temperature in pellet samples to show the evolution of incorporating Cd dopants into the crystal lattice. Additionally, the system was characterized with X-ray fluorescence, electron dispersive spectroscopy, and scanning electron microscopy after the probe nuclei 111In(111Cd) decayed. The TDPAC results reveal that the probe ions were incorporated into two different local environments of the SnO2 lattice at temperatures up to 973 K for cation substitutional sites. View Full-Text
Keywords: hyperfine interactions; tin dioxide; perturbed angular correlations hyperfine interactions; tin dioxide; perturbed angular correlations
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Schell, J.; Dang, T.T.; Carbonari, A.W. Incorporation of Cd-Doping in SnO2. Crystals 2020, 10, 35.

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