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Journal: Micromachines, 2025
Volume: 16
Number: 1214
1214
Article: Single-Crystalline Si Stacked AlGaN/GaN High-Electron-Mobility Transistors with Enhanced Two-Dimensional Electron Gas Density
Authors: by Goeun Ham, Eungyeol Shin, Sangwon Yoon, Jihoon Yang, Youngjin Choi, Gunwoo Lim and Kwangeun Kim
Link: https://www.mdpi.com/2072-666X/16/11/1214

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