Order Article Reprints

O’Sullivan B, Rathi A, Alian A, Yadav S, Yu H, Sibaja-Hernandez A, Peralagu U, Parvais B, Chasin A, Collaert N. Charge Trapping and Emission during Bias Temperature Stressing of Schottky Gate GaN-on-Silicon HEMT Structures Targeting RF/mm Wave Power Amplifiers. Micromachines. 2024; 15(8):951. https://doi.org/10.3390/mi15080951

O’Sullivan, Barry, Aarti Rathi, Alireza Alian, Sachin Yadav, Hao Yu, Arturo Sibaja-Hernandez, Uthayasankaran Peralagu, Bertrand Parvais, Adrian Chasin, and Nadine Collaert. 2024. "Charge Trapping and Emission during Bias Temperature Stressing of Schottky Gate GaN-on-Silicon HEMT Structures Targeting RF/mm Wave Power Amplifiers" Micromachines 15, no. 8: 951. https://doi.org/10.3390/mi15080951

O’Sullivan, B., Rathi, A., Alian, A., Yadav, S., Yu, H., Sibaja-Hernandez, A., Peralagu, U., Parvais, B., Chasin, A., & Collaert, N. (2024). Charge Trapping and Emission during Bias Temperature Stressing of Schottky Gate GaN-on-Silicon HEMT Structures Targeting RF/mm Wave Power Amplifiers. Micromachines, 15(8), 951. https://doi.org/10.3390/mi15080951