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Journal: Micromachines, 2024
Volume: 15
Number: 517
Article:
Improvement Performance of p-GaN Gate High-Electron-Mobility Transistors with GaN/AlN/AlGaN Barrier Structure
Authors:
by
An-Chen Liu, Yu-Wen Huang, Hsin-Chu Chen and Hao-Chung Kuo
Link:
https://www.mdpi.com/2072-666X/15/4/517
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