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Journal: Micromachines, 2024
Volume: 15
Number: 512
Article:
Enhancing the Carrier Mobility and Bias Stability in Metal–Oxide Thin Film Transistors with Bilayer InSnO/a-InGaZnO Heterojunction Structure
Authors:
by
Xiaoming Huang, Chen Chen, Fei Sun, Xinlei Chen, Weizong Xu and Lin Li
Link:
https://www.mdpi.com/2072-666X/15/4/512
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