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Journal: Micromachines, 2024
Volume: 15
Number: 496

Article: The Effects of a Gate Bias Condition on 1.2 kV SiC MOSFETs during Irradiating Gamma-Radiation
Authors: by Chaeyun Kim, Hyowon Yoon, Yeongeun Park, Sangyeob Kim, Gyuhyeok Kang, Dong-Seok Kim and Ogyun Seok
Link: https://www.mdpi.com/2072-666X/15/4/496

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