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Journal: Micromachines, 2024
Volume: 15
Number: 1356
Article:
Understanding and Quantifying the Benefit of Graded Aluminum Gallium Nitride Channel High-Electron Mobility Transistors
Authors:
by
François Grandpierron, Elodie Carneiro, Lyes Ben-Hammou, Jeong-Sun Moon and Farid Medjdoub
Link:
https://www.mdpi.com/2072-666X/15/11/1356
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