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Journal: Micromachines, 2024
Volume: 15
Number: 57
57
Article: Optimization of Gate-Head-Top/Bottom Lengths of AlGaN/GaN High-Electron-Mobility Transistors with a Gate-Recessed Structure for High-Power Operations: A Simulation Study
Authors: by Woo-Seok Kang, Jun-Hyeok Choi, Dohyung Kim, Ji-Hun Kim, Jun-Ho Lee, Byoung-Gue Min, Dong Min Kang, Jung Han Choi and Hyun-Seok Kim
Link: https://www.mdpi.com/2072-666X/15/1/57

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