Kang, W.-S.; Choi, J.-H.; Kim, D.; Kim, J.-H.; Lee, J.-H.; Min, B.-G.; Kang, D.M.; Choi, J.H.; Kim, H.-S.
Optimization of Gate-Head-Top/Bottom Lengths of AlGaN/GaN High-Electron-Mobility Transistors with a Gate-Recessed Structure for High-Power Operations: A Simulation Study. Micromachines 2024, 15, 57.
https://doi.org/10.3390/mi15010057
AMA Style
Kang W-S, Choi J-H, Kim D, Kim J-H, Lee J-H, Min B-G, Kang DM, Choi JH, Kim H-S.
Optimization of Gate-Head-Top/Bottom Lengths of AlGaN/GaN High-Electron-Mobility Transistors with a Gate-Recessed Structure for High-Power Operations: A Simulation Study. Micromachines. 2024; 15(1):57.
https://doi.org/10.3390/mi15010057
Chicago/Turabian Style
Kang, Woo-Seok, Jun-Hyeok Choi, Dohyung Kim, Ji-Hun Kim, Jun-Ho Lee, Byoung-Gue Min, Dong Min Kang, Jung Han Choi, and Hyun-Seok Kim.
2024. "Optimization of Gate-Head-Top/Bottom Lengths of AlGaN/GaN High-Electron-Mobility Transistors with a Gate-Recessed Structure for High-Power Operations: A Simulation Study" Micromachines 15, no. 1: 57.
https://doi.org/10.3390/mi15010057
APA Style
Kang, W.-S., Choi, J.-H., Kim, D., Kim, J.-H., Lee, J.-H., Min, B.-G., Kang, D. M., Choi, J. H., & Kim, H.-S.
(2024). Optimization of Gate-Head-Top/Bottom Lengths of AlGaN/GaN High-Electron-Mobility Transistors with a Gate-Recessed Structure for High-Power Operations: A Simulation Study. Micromachines, 15(1), 57.
https://doi.org/10.3390/mi15010057
