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Journal: MicromachinesVolume: 14Number: 1107
Article: A Novel Scheme for Full Bottom Dielectric Isolation in Stacked Si Nanosheet Gate-All-Around Transistors
  • Authors:
  • Jingwen Yang1,
  • Ziqiang Huang1 and
  • Dawei Wang1
  • et al.
Link: https://www.mdpi.com/2072-666X/14/6/1107

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