Yang, J.; Chen, K.; Wang, D.; Liu, T.; Sun, X.; Wang, Q.; Huang, Z.; Pan, Z.; Xu, S.; Wang, C.;
et al. Impact of Stress and Dimension on Nanosheet Deformation during Channel Release of Gate-All-Around Device. Micromachines 2023, 14, 611.
https://doi.org/10.3390/mi14030611
AMA Style
Yang J, Chen K, Wang D, Liu T, Sun X, Wang Q, Huang Z, Pan Z, Xu S, Wang C,
et al. Impact of Stress and Dimension on Nanosheet Deformation during Channel Release of Gate-All-Around Device. Micromachines. 2023; 14(3):611.
https://doi.org/10.3390/mi14030611
Chicago/Turabian Style
Yang, Jingwen, Kun Chen, Dawei Wang, Tao Liu, Xin Sun, Qiang Wang, Ziqiang Huang, Zhecheng Pan, Saisheng Xu, Chen Wang,
and et al. 2023. "Impact of Stress and Dimension on Nanosheet Deformation during Channel Release of Gate-All-Around Device" Micromachines 14, no. 3: 611.
https://doi.org/10.3390/mi14030611
APA Style
Yang, J., Chen, K., Wang, D., Liu, T., Sun, X., Wang, Q., Huang, Z., Pan, Z., Xu, S., Wang, C., Wu, C., Xu, M., & Zhang, D. W.
(2023). Impact of Stress and Dimension on Nanosheet Deformation during Channel Release of Gate-All-Around Device. Micromachines, 14(3), 611.
https://doi.org/10.3390/mi14030611
