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Journal: Micromachines, 2022
Volume: 13
Number: 901

Article: Influence of Radiation-Induced Displacement Defect in 1.2 kV SiC Metal-Oxide-Semiconductor Field-Effect Transistors
Authors: by Gyeongyeop Lee, Jonghyeon Ha, Kihyun Kim, Hagyoul Bae, Chong-Eun Kim and Jungsik Kim
Link: https://www.mdpi.com/2072-666X/13/6/901

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