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Journal: Micromachines, 2021
Volume: 12
Number: 199

Article: Surface-Potential-Based Compact Modeling of p-GaN Gate HEMTs
Authors: by Jie Wang, Zhanfei Chen, Shuzhen You, Benoit Bakeroot, Jun Liu and Stefaan Decoutere
Link: https://www.mdpi.com/2072-666X/12/2/199

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