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Journal: Micromachines, 2020
Volume: 11
Number: 154

Article: The Effect of Multi-Layer Stacking Sequence of TiOx Active Layers on the Resistive-Switching Characteristics of Memristor Devices
Authors: by Minho Kim, Kungsang Yoo, Seong-Pil Jeon, Sung Kyu Park and Yong-Hoon Kim
Link: https://www.mdpi.com/2072-666X/11/2/154

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