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Open AccessArticle

Effect of Post Treatment For Cu-Cr Source/Drain Electrodes on a-IGZO TFTs

Institute of Polymer Optoelectronic Materials and Devices, State Key Laboratory of Luminescent Materials and Devices, Department of Materials Science and Engineering School, South China University of Technology, Guangzhou 510640, China
School of Materials Science and Engineering, Chongqing University of Technology, Chongqing 400054, China
State Key Laboratory of New Ceramic and Fine Processing, Tsinghua University, Beijing 100084, China
Authors to whom correspondence should be addressed.
Academic Editor: Federico Bella
Materials 2016, 9(8), 623;
Received: 30 May 2016 / Revised: 5 July 2016 / Accepted: 12 July 2016 / Published: 27 July 2016
(This article belongs to the Section Advanced Composites)
We report a high-performance amorphous Indium-Gallium-Zinc-Oxide (a-IGZO) thin-film transistor (TFT) with new copper-chromium (Cu-Cr) alloy source/drain electrodes. The TFT shows a high mobility of 39.4 cm 2 ·V 1 ·s 1 a turn-on voltage of −0.8 V and a low subthreshold swing of 0.47 V/decade. Cu diffusion is suppressed because pre-annealing can protect a-IGZO from damage during the electrode sputtering and reduce the copper diffusion paths by making film denser. Due to the interaction of Cr with a-IGZO, the carrier concentration of a-IGZO, which is responsible for high mobility, rises. View Full-Text
Keywords: interfaces; semiconductors; a-IGZO; Cu-Cr; TFTs; electrodes interfaces; semiconductors; a-IGZO; Cu-Cr; TFTs; electrodes
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MDPI and ACS Style

Hu, S.; Fang, Z.; Ning, H.; Tao, R.; Liu, X.; Zeng, Y.; Yao, R.; Huang, F.; Li, Z.; Xu, M.; Wang, L.; Lan, L.; Peng, J. Effect of Post Treatment For Cu-Cr Source/Drain Electrodes on a-IGZO TFTs. Materials 2016, 9, 623.

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