Order Article Reprints

Abidin MSZ, Morshed T, Chikita H, Kinoshita Y, Muta S, Anisuzzaman M, Park J-H, Matsumura R, Mahmood MR, Sadoh T, et al. The Effects of Annealing Temperatures on Composition and Strain in Si_xGe_1−x Obtained by Melting Growth of Electrodeposited Ge on Si (100). Materials. 2014; 7(2):1409-1421. https://doi.org/10.3390/ma7021409

Abidin, Mastura Shafinaz Zainal, Tahsin Morshed, Hironori Chikita, Yuki Kinoshita, Shunpei Muta, Mohammad Anisuzzaman, Jong-Hyeok Park, Ryo Matsumura, Mohamad Rusop Mahmood, Taizoh Sadoh, and et al. 2014. "The Effects of Annealing Temperatures on Composition and Strain in Si_xGe_1−x Obtained by Melting Growth of Electrodeposited Ge on Si (100)" Materials 7, no. 2: 1409-1421. https://doi.org/10.3390/ma7021409

Abidin, M. S. Z., Morshed, T., Chikita, H., Kinoshita, Y., Muta, S., Anisuzzaman, M., Park, J.-H., Matsumura, R., Mahmood, M. R., Sadoh, T., & Hashim, A. M. (2014). The Effects of Annealing Temperatures on Composition and Strain in Si_xGe_1−x Obtained by Melting Growth of Electrodeposited Ge on Si (100). Materials, 7(2), 1409-1421. https://doi.org/10.3390/ma7021409