Abidin, M.S.Z.; Morshed, T.; Chikita, H.; Kinoshita, Y.; Muta, S.; Anisuzzaman, M.; Park, J.-H.; Matsumura, R.; Mahmood, M.R.; Sadoh, T.;
et al. The Effects of Annealing Temperatures on Composition and Strain in SixGe1−x Obtained by Melting Growth of Electrodeposited Ge on Si (100). Materials 2014, 7, 1409-1421.
https://doi.org/10.3390/ma7021409
AMA Style
Abidin MSZ, Morshed T, Chikita H, Kinoshita Y, Muta S, Anisuzzaman M, Park J-H, Matsumura R, Mahmood MR, Sadoh T,
et al. The Effects of Annealing Temperatures on Composition and Strain in SixGe1−x Obtained by Melting Growth of Electrodeposited Ge on Si (100). Materials. 2014; 7(2):1409-1421.
https://doi.org/10.3390/ma7021409
Chicago/Turabian Style
Abidin, Mastura Shafinaz Zainal, Tahsin Morshed, Hironori Chikita, Yuki Kinoshita, Shunpei Muta, Mohammad Anisuzzaman, Jong-Hyeok Park, Ryo Matsumura, Mohamad Rusop Mahmood, Taizoh Sadoh,
and et al. 2014. "The Effects of Annealing Temperatures on Composition and Strain in SixGe1−x Obtained by Melting Growth of Electrodeposited Ge on Si (100)" Materials 7, no. 2: 1409-1421.
https://doi.org/10.3390/ma7021409
APA Style
Abidin, M. S. Z., Morshed, T., Chikita, H., Kinoshita, Y., Muta, S., Anisuzzaman, M., Park, J.-H., Matsumura, R., Mahmood, M. R., Sadoh, T., & Hashim, A. M.
(2014). The Effects of Annealing Temperatures on Composition and Strain in SixGe1−x Obtained by Melting Growth of Electrodeposited Ge on Si (100). Materials, 7(2), 1409-1421.
https://doi.org/10.3390/ma7021409
