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Plasma Enhanced Chemical Vapour Deposition of Horizontally Aligned Carbon Nanotubes

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Department of Engineering, Cambridge University, 9 JJ Thomson Avenue, Cambridge CB3 0FA, UK
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AIXTRON Ltd., Cambridge CB24 4FQ, UK
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Department of Information Display, Kyung Hee University, Seoul 130-701, Korea
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Author to whom correspondence should be addressed.
Materials 2013, 6(6), 2262-2273; https://doi.org/10.3390/ma6062262
Received: 10 May 2013 / Revised: 27 May 2013 / Accepted: 28 May 2013 / Published: 31 May 2013
(This article belongs to the Special Issue Carbon Nanotubes)
A plasma-enhanced chemical vapour deposition reactor has been developed to synthesis horizontally aligned carbon nanotubes. The width of the aligning sheath was modelled based on a collisionless, quasi-neutral, Child’s law ion sheath where these estimates were empirically validated by direct Langmuir probe measurements, thereby confirming the proposed reactors ability to extend the existing sheath fields by up to 7 mm. A 7 mbar growth atmosphere combined with a 25 W plasma permitted the concurrent growth and alignment of carbon nanotubes with electric fields of the order of 0.04 V μm−1 with linear packing densities of up to ~5 × 104 cm−1. These results open up the potential for multi-directional in situ alignment of carbon nanotubes providing one viable route to the fabrication of many novel optoelectronic devices. View Full-Text
Keywords: carbon nanotube; in situ horizontal alignment; plasma enhanced chemical vapor deposition; electric field carbon nanotube; in situ horizontal alignment; plasma enhanced chemical vapor deposition; electric field
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Cole, M.T.; Milne, W.I. Plasma Enhanced Chemical Vapour Deposition of Horizontally Aligned Carbon Nanotubes. Materials 2013, 6, 2262-2273.

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