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Materials 2010, 3(1), 536-562;

Porous Dielectrics in Microelectronic Wiring Applications

International Business Machines Corporation, 2070 Route 52, Hopewell Junction, NY 12533, USA
Received: 7 December 2009 / Revised: 1 January 2010 / Accepted: 14 January 2010 / Published: 18 January 2010
(This article belongs to the Special Issue Porous Materials)
Full-Text   |   PDF [349 KB, uploaded 18 January 2010]   |  


Porous insulators are utilized in the wiring structure of microelectronic devices as a means of reducing, through low dielectric permittivity, power consumption and signal delay in integrated circuits. They are typically based on low density modifications of amorphous SiO2 known as SiCOH or carbon-doped oxides, in which free volume is created through the removal of labile organic phases. Porous dielectrics pose a number of technological challenges related to chemical and mechanical stability, particularly in regard to semiconductor processing methods. This review discusses porous dielectric film preparation techniques, key issues encountered, and mitigation strategies. View Full-Text
Keywords: porosity; dielectric; interconnect; microelectronic; integrated circuit; semiconductor porosity; dielectric; interconnect; microelectronic; integrated circuit; semiconductor

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This is an open access article distributed under the Creative Commons Attribution License (CC BY 3.0).

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McGahay, V. Porous Dielectrics in Microelectronic Wiring Applications. Materials 2010, 3, 536-562.

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