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Article

Flow Field Simulation and Experimental Study of Electrode-Assisted Oscillating Electrical Discharge Machining in the Cf-ZrB2-SiC Micro-Blind Hole

1
Dalian Scientific Test and Control Technology Institute, Dalian 116013, China
2
Beijing Aeronautical Technology Research Center, Beijing 100076, China
3
School of Mechatronics Engineering, Harbin Institute of Technology, Harbin 150001, China
*
Authors to whom correspondence should be addressed.
Materials 2025, 18(17), 3944; https://doi.org/10.3390/ma18173944
Submission received: 1 July 2025 / Revised: 9 August 2025 / Accepted: 18 August 2025 / Published: 22 August 2025

Abstract

In the micro-EDM blind-hole machining of Cf-ZrB2-SiC ceramics, defects such as bottom surface protrusion and machining fillets are often encountered. The implementation of an electrode-assisted oscillating device has proven effective in improving machining outcomes. To unravel the fundamental reasons behind the optimization enabled by this auxiliary oscillating device, this paper presents fluid simulation research, providing a quantitative comparison of the differences in machining gap flow field characteristics and debris motion behaviors under conditions with and without the assistance of the oscillating device. Firstly, this paper briefly describes the characteristics of Cf-ZrB2-SiC discharge products and flow field deficiencies during conventional machining and introduces the working principle of electrode-assisted oscillation devices to establish the background and objectives of the simulation study. Subsequently, this research established simulation models for both conventional machining and oscillating machining based on actual processing conditions. CFD numerical simulations were conducted to compare flow field differences between conditions with and without auxiliary machining devices. The results demonstrate that, compared to conventional machining, electrode oscillation not only increases the maximum velocity of the working fluid by nearly 32% but also provides a larger debris accommodation space, effectively preventing secondary discharge. Regarding debris agglomeration, oscillating machining resolves the low-velocity zone issues present in conventional modes, increasing debris velocity from 0 mm/s to 7.5 mm/s and ensuring continuous debris motion. Furthermore, the DPM was used to analyze particle distribution and motion velocities, confirming that vortex effects form within the hole under oscillating conditions. These vortices effectively draw bottom debris outward, preventing local accumulation. Finally, from the perspective of debris distribution, the formation mechanisms of micro-hole morphology and the tool electrode wear patterns were explained.
Keywords: Cf-ZrB2-SiC; micro-EDM; micro-hole; flow field simulation; electrode-assisted oscillating device Cf-ZrB2-SiC; micro-EDM; micro-hole; flow field simulation; electrode-assisted oscillating device
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MDPI and ACS Style

Ge, C.; Gong, S.; He, J.; Wang, K.; Xiu, J.; Wang, Z. Flow Field Simulation and Experimental Study of Electrode-Assisted Oscillating Electrical Discharge Machining in the Cf-ZrB2-SiC Micro-Blind Hole. Materials 2025, 18, 3944. https://doi.org/10.3390/ma18173944

AMA Style

Ge C, Gong S, He J, Wang K, Xiu J, Wang Z. Flow Field Simulation and Experimental Study of Electrode-Assisted Oscillating Electrical Discharge Machining in the Cf-ZrB2-SiC Micro-Blind Hole. Materials. 2025; 18(17):3944. https://doi.org/10.3390/ma18173944

Chicago/Turabian Style

Ge, Chuanyang, Sirui Gong, Junbo He, Kewen Wang, Jiahao Xiu, and Zhenlong Wang. 2025. "Flow Field Simulation and Experimental Study of Electrode-Assisted Oscillating Electrical Discharge Machining in the Cf-ZrB2-SiC Micro-Blind Hole" Materials 18, no. 17: 3944. https://doi.org/10.3390/ma18173944

APA Style

Ge, C., Gong, S., He, J., Wang, K., Xiu, J., & Wang, Z. (2025). Flow Field Simulation and Experimental Study of Electrode-Assisted Oscillating Electrical Discharge Machining in the Cf-ZrB2-SiC Micro-Blind Hole. Materials, 18(17), 3944. https://doi.org/10.3390/ma18173944

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