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Journal: Materials, 2024
Volume: 17
Number: 5515

Article: Optimization Conditions for High-Power AlGaN/InGaN/GaN/AlGaN High-Electron-Mobility Transistor Grown on SiC Substrate
Authors: by Bonghwan Kim and Seung-Hwan Park
Link: https://www.mdpi.com/1996-1944/17/22/5515

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