Levchenko, I.; Kryvyi, S.; Kamińska, E.; Smalc-Koziorowska, J.; Grzanka, S.; Kacperski, J.; Nowak, G.; Kret, S.; Marona, Ł.; Perlin, P.
Pros and Cons of (NH4)2S Solution Treatment of p-GaN/Metallization Interface: Perspectives for Laser Diode. Materials 2024, 17, 4520.
https://doi.org/10.3390/ma17184520
AMA Style
Levchenko I, Kryvyi S, Kamińska E, Smalc-Koziorowska J, Grzanka S, Kacperski J, Nowak G, Kret S, Marona Ł, Perlin P.
Pros and Cons of (NH4)2S Solution Treatment of p-GaN/Metallization Interface: Perspectives for Laser Diode. Materials. 2024; 17(18):4520.
https://doi.org/10.3390/ma17184520
Chicago/Turabian Style
Levchenko, Iryna, Serhii Kryvyi, Eliana Kamińska, Julita Smalc-Koziorowska, Szymon Grzanka, Jacek Kacperski, Grzegorz Nowak, Sławomir Kret, Łucja Marona, and Piotr Perlin.
2024. "Pros and Cons of (NH4)2S Solution Treatment of p-GaN/Metallization Interface: Perspectives for Laser Diode" Materials 17, no. 18: 4520.
https://doi.org/10.3390/ma17184520
APA Style
Levchenko, I., Kryvyi, S., Kamińska, E., Smalc-Koziorowska, J., Grzanka, S., Kacperski, J., Nowak, G., Kret, S., Marona, Ł., & Perlin, P.
(2024). Pros and Cons of (NH4)2S Solution Treatment of p-GaN/Metallization Interface: Perspectives for Laser Diode. Materials, 17(18), 4520.
https://doi.org/10.3390/ma17184520