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Journal: MaterialsVolume: 16Number: 2285
Article: Effect of Gate Bias Stress on the Electrical Characteristics of Ferroelectric Oxide Thin-Film Transistors with Poly(Vinylidenefluoride-Trifluoroethylene)
- Authors:
- Bon-Seong Gu1,
- Eun-Seo Park1 and
- Jin-Hyuk Kwon2,*
- et al.
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