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Journal: Materials, 2023
Volume: 16
Number: 6136

Article: Improved Uniformity of TaOx-Based Resistive Switching Memory Device by Inserting Thin SiO2 Layer for Neuromorphic System
Authors: by Dongyeol Ju, Sunghun Kim, Junwon Jang and Sungjun Kim
Link: https://www.mdpi.com/1996-1944/16/18/6136

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